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Update
What changedSamsung has accepted Nvidia’s reported requirement to use TSMC’s 3-nanometre process for base dies in its next-generation custom NVHBM memory, while keeping its own manufacturing model for standard HBM products and other client orders, The News International reports, citing the Seoul Economic Daily.
The report says Nvidia also wants sixth-generation DRAM for the memory’s core dies. That adds a second manufacturing specification to the arrangement, beyond the TSMC process already reported.
Samsung is reportedly evaluating its own advanced foundry processes as a fallback if demand for NVHBM base dies exceeds TSMC’s available capacity. The detail suggests Samsung is accepting an outside process for this Nvidia product without abandoning its broader in-house approach. It is a reported contingency, not a confirmed production plan.
Sources and evidence- Samsung to use TSMC's 3nm process for Nvidia's next-gen AI memory chips – The News International: The News International reports, citing the Seoul Economic Daily, that Samsung accepted Nvidia’s reported NVHBM manufacturing requirements while retaining in-house production for standard HBM and other orders, and is evaluating its own foundry processes as a contingency if TSMC capacity is insufficient.
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